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VS-8EWF10S-M3 Vishay General Semiconductor - Diodes Division
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Description: DIODE GEN PURP 1KV 8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
auf Bestellung 2780 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.77 EUR |
75+ | 2.99 EUR |
150+ | 2.56 EUR |
525+ | 2.51 EUR |
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Technische Details VS-8EWF10S-M3 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 8A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 270 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-252AA (DPAK), Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A, Current - Reverse Leakage @ Vr: 100 µA @ 1000 V.
Weitere Produktangebote VS-8EWF10S-M3 nach Preis ab 2.6 EUR bis 5.35 EUR
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VS-8EWF10S-M3 | Hersteller : Vishay Semiconductors |
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auf Bestellung 2351 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-8EWF10S-M3 | Hersteller : VISHAY |
![]() Description: Diode: rectifying; SMD; 1kV; 8A; 80ns; DPAK; Ufmax: 1.3V; Ifsm: 150A Mounting: SMD Semiconductor structure: single diode Reverse recovery time: 80ns Max. forward impulse current: 150A Case: DPAK Type of diode: rectifying Features of semiconductor devices: fast switching; glass passivated Max. off-state voltage: 1kV Max. forward voltage: 1.3V Load current: 8A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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VS-8EWF10S-M3 | Hersteller : VISHAY |
![]() Description: Diode: rectifying; SMD; 1kV; 8A; 80ns; DPAK; Ufmax: 1.3V; Ifsm: 150A Mounting: SMD Semiconductor structure: single diode Reverse recovery time: 80ns Max. forward impulse current: 150A Case: DPAK Type of diode: rectifying Features of semiconductor devices: fast switching; glass passivated Max. off-state voltage: 1kV Max. forward voltage: 1.3V Load current: 8A |
Produkt ist nicht verfügbar |