_Top.jpg "VS-3C04ET07S2L-M3")
VS-3C04ET07S2L-M3 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: 650 V POWER SIC GEN 3 MERGED PIN
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 175pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 2.91 EUR |
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Technische Details VS-3C04ET07S2L-M3 Vishay General Semiconductor - Diodes Division
Description: 650 V POWER SIC GEN 3 MERGED PIN, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 175pF @ 1V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: TO-263AB (D²PAK), Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A, Current - Reverse Leakage @ Vr: 25 µA @ 650 V.
Weitere Produktangebote VS-3C04ET07S2L-M3 nach Preis ab 1.9 EUR bis 4.77 EUR
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VS-3C04ET07S2L-M3 | Hersteller : Vishay Semiconductors |
SiC Schottky Diodes SILICON CARBIDE DIODE - D2-PAK |
auf Bestellung 1499 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-3C04ET07S2L-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: 650 V POWER SIC GEN 3 MERGED PIN Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 175pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Current - Reverse Leakage @ Vr: 25 µA @ 650 V |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-3C04ET07S2L-M3 | Hersteller : Vishay |
Diode Schottky SiC 650V 4A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| VS-3C04ET07S2L-M3 | Hersteller : VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.5V Max. forward impulse current: 29A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| VS-3C04ET07S2L-M3 | Hersteller : VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.5V Max. forward impulse current: 29A Kind of package: reel; tape |
Produkt ist nicht verfügbar |