VS-20ETS16PBF Vishay Semiconductors
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Technische Details VS-20ETS16PBF Vishay Semiconductors
Description: DIODE GEN PURP 1.6KV 20A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-220-3, Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A, Current - Reverse Leakage @ Vr: 100 µA @ 1600 V.
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VS-20ETS16PBF | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 1.6KV 20A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 1600 V |
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