![VS-20ETS08S-M3 VS-20ETS08S-M3](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/5858/112%7ETO263ABD2PAK%7E%7E2.jpg)
VS-20ETS08S-M3 Vishay General Semiconductor - Diodes Division
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Description: DIODE GEN PURP 800V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
auf Bestellung 5961 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.41 EUR |
50+ | 2.75 EUR |
100+ | 2.26 EUR |
500+ | 1.91 EUR |
1000+ | 1.62 EUR |
2000+ | 1.54 EUR |
5000+ | 1.48 EUR |
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Technische Details VS-20ETS08S-M3 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 20A TO263AB, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A, Current - Reverse Leakage @ Vr: 100 µA @ 800 V.
Weitere Produktangebote VS-20ETS08S-M3 nach Preis ab 1.81 EUR bis 3.45 EUR
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VS-20ETS08S-M3 | Hersteller : Vishay Semiconductors |
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auf Bestellung 7925 Stücke: Lieferzeit 10-14 Tag (e) |
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VS-20ETS08S-M3 | Hersteller : Vishay |
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VS-20ETS08S-M3 | Hersteller : VISHAY |
![]() Description: Diode: rectifying; SMD; 800V; 20A; D2PAK,TO263AB; Ufmax: 1.1V; tube Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 20A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: D2PAK; TO263AB Max. forward voltage: 1.1V Max. forward impulse current: 250A Leakage current: 1mA Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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VS-20ETS08S-M3 | Hersteller : VISHAY |
![]() Description: Diode: rectifying; SMD; 800V; 20A; D2PAK,TO263AB; Ufmax: 1.1V; tube Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 20A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: D2PAK; TO263AB Max. forward voltage: 1.1V Max. forward impulse current: 250A Leakage current: 1mA Kind of package: tube |
Produkt ist nicht verfügbar |