![VS-20ETF12FP-M3 VS-20ETF12FP-M3](https://ce8dc832c.cloudimg.io/v7/_cdn_/AA/37/B0/00/0/750506_1.jpg?width=640&height=480&wat=1&wat_url=_tme-wrk_%2Ftme_new.png&wat_scale=100p&ci_sign=c92bc72e44c6604712edb1384528dda08c8897e7)
VS-20ETF12FP-M3 VISHAY
![vs-20etf10_12fp-m3.pdf](/images/adobe-acrobat.png)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 20A; tube; Ifsm: 320A; TO220FP; Ir: 6mA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 320A
Case: TO220FP
Max. forward voltage: 1.31V
Leakage current: 6mA
Reverse recovery time: 95ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 576 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
18+ | 3.99 EUR |
20+ | 3.6 EUR |
26+ | 2.76 EUR |
28+ | 2.62 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details VS-20ETF12FP-M3 VISHAY
Description: DIODE GP 1.2KV 20A TO220-2FP, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 400 ns, Technology: Standard, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-220-2 Full Pack, Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
Weitere Produktangebote VS-20ETF12FP-M3 nach Preis ab 2.62 EUR bis 5.61 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
VS-20ETF12FP-M3 | Hersteller : VISHAY |
![]() Description: Diode: rectifying; THT; 1.2kV; 20A; tube; Ifsm: 320A; TO220FP; Ir: 6mA Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 320A Case: TO220FP Max. forward voltage: 1.31V Leakage current: 6mA Reverse recovery time: 95ns |
auf Bestellung 576 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
VS-20ETF12FP-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
auf Bestellung 705 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
VS-20ETF12FP-M3 | Hersteller : Vishay Semiconductors |
![]() |
auf Bestellung 840 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
VS-20ETF12FP-M3 | Hersteller : Vishay |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||||
![]() |
VS-20ETF12FP-M3 | Hersteller : Vishay |
![]() |
Produkt ist nicht verfügbar |