auf Bestellung 75 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 18.5 EUR |
| 10+ | 17 EUR |
| 20+ | 16.3 EUR |
| 50+ | 15.79 EUR |
| 100+ | 12 EUR |
| 200+ | 11.4 EUR |
| 500+ | 11.35 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details VS-1N1187 Vishay Semiconductors
Description: DIODE GEN PURP 300V 35A DO203AB, Packaging: Bulk, Package / Case: DO-203AB, DO-5, Stud, Mounting Type: Chassis, Stud Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 35A, Supplier Device Package: DO-203AB (DO-5), Operating Temperature - Junction: -65°C ~ 190°C, Voltage - DC Reverse (Vr) (Max): 300 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 110 A, Current - Reverse Leakage @ Vr: 10 mA @ 300 V.
Weitere Produktangebote VS-1N1187
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
VS-1N1187 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 300V 35A DO203ABPackaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 35A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 190°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 110 A Current - Reverse Leakage @ Vr: 10 mA @ 300 V |
Produkt ist nicht verfügbar |