VS-1EFH01HM3/I Vishay Semiconductors
auf Bestellung 2680 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.7 EUR |
10+ | 0.5 EUR |
100+ | 0.25 EUR |
1000+ | 0.17 EUR |
2500+ | 0.15 EUR |
10000+ | 0.13 EUR |
20000+ | 0.12 EUR |
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Technische Details VS-1EFH01HM3/I Vishay Semiconductors
Description: DIODE GEN PURP 100V 1A DO219AB, Packaging: Tape & Reel (TR), Package / Case: DO-219AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 16 ns, Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-219AB (SMF), Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A, Current - Reverse Leakage @ Vr: 2 µA @ 100 V.
Weitere Produktangebote VS-1EFH01HM3/I
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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VS-1EFH01HM3/I | Hersteller : VISHAY | VS-1EFH01HM3/I SMD universal diodes |
Produkt ist nicht verfügbar |
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VS-1EFH01HM3/I | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO219AB Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 16 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
Produkt ist nicht verfügbar |