VS-15ETH06-1-M3 Vishay Semiconductors
auf Bestellung 913 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 1.97 EUR |
10+ | 1.61 EUR |
100+ | 1.25 EUR |
500+ | 1.06 EUR |
1000+ | 0.86 EUR |
3000+ | 0.81 EUR |
5000+ | 0.77 EUR |
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Technische Details VS-15ETH06-1-M3 Vishay Semiconductors
Description: DIODE GEN PURP 600V 15A TO262AA, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Current - Average Rectified (Io): 15A, Supplier Device Package: TO-262AA, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V.
Weitere Produktangebote VS-15ETH06-1-M3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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VS-15ETH06-1-M3 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 15A TO262AA Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-262AA Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
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