VP0550N3-G MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -54mA; Idm: -0.25A; 1W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Pulsed drain current: -0.25A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 125Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhanced
Drain current: -54mA
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -54mA; Idm: -0.25A; 1W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Pulsed drain current: -0.25A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 125Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhanced
Drain current: -54mA
auf Bestellung 631 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
49+ | 1.49 EUR |
55+ | 1.32 EUR |
59+ | 1.23 EUR |
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Technische Details VP0550N3-G MICROCHIP TECHNOLOGY
Description: MOSFET P-CH 500V 54MA TO92-3, Packaging: Bag, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 54mA (Tj), Rds On (Max) @ Id, Vgs: 125Ohm @ 10mA, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 25 V.
Weitere Produktangebote VP0550N3-G nach Preis ab 2.80 EUR bis 3.68 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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VP0550N3-G | Hersteller : Microchip Technology | MOSFETs 500V 125Ohm |
auf Bestellung 1945 Stücke: Lieferzeit 10-14 Tag (e) |
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VP0550N3-G | Hersteller : Microchip Technology |
Description: MOSFET P-CH 500V 54MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 54mA (Tj) Rds On (Max) @ Id, Vgs: 125Ohm @ 10mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 25 V |
auf Bestellung 955 Stücke: Lieferzeit 10-14 Tag (e) |
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