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VN2460N8-g Microchip Technology
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Description: MOSFET N-CH 600V 200MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
Rds On (Max) @ Id, Vgs: 20Ohm @ 100mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2000+ | 1.89 EUR |
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Technische Details VN2460N8-g Microchip Technology
Description: MOSFET N-CH 600V 200MA TO243AA, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Tj), Rds On (Max) @ Id, Vgs: 20Ohm @ 100mA, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 4V @ 2mA, Supplier Device Package: TO-243AA (SOT-89), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V.
Weitere Produktangebote VN2460N8-g nach Preis ab 1.88 EUR bis 2.53 EUR
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VN2460N8-g | Hersteller : Microchip Technology |
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auf Bestellung 6673 Stücke: Lieferzeit 10-14 Tag (e) |
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VN2460N8-g | Hersteller : Microchip Technology |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Tj) Rds On (Max) @ Id, Vgs: 20Ohm @ 100mA, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 4V @ 2mA Supplier Device Package: TO-243AA (SOT-89) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V |
auf Bestellung 3597 Stücke: Lieferzeit 10-14 Tag (e) |
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VN2460N8-G | Hersteller : Microchip Technology |
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auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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VN2460N8-G | Hersteller : Microchip Technology |
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VN2460N8-G | Hersteller : Microchip Technology |
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VN2460N8-G | Hersteller : Microchip Technology |
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VN2460N8-g | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 200mA; Idm: 0.6A; 1.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.2A Pulsed drain current: 0.6A Power dissipation: 1.6W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 20Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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VN2460N8-g | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 200mA; Idm: 0.6A; 1.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.2A Pulsed drain current: 0.6A Power dissipation: 1.6W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 20Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |