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VBT1060C-M3/4W Vishay General Semiconductor - Diodes Division
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Description: DIODE ARR SCHOTT 60V 5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
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Technische Details VBT1060C-M3/4W Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 5A TO263AB, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 5A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A, Current - Reverse Leakage @ Vr: 700 µA @ 60 V.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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VBT1060C-M3/4W | Hersteller : Vishay General Semiconductor |
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