Technische Details VBT10200C-E3/8W Vishay
Description: DIODE ARR SCHOTT 200V 5A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 5A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A, Current - Reverse Leakage @ Vr: 150 µA @ 200 V.
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VBT10200C-E3/8W | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A Current - Reverse Leakage @ Vr: 150 µA @ 200 V |
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VBT10200C-E3/8W | Hersteller : Vishay General Semiconductor |
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Produkt ist nicht verfügbar |