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V8PAM10-M3/I

V8PAM10-M3/I Vishay General Semiconductor

v8pam10.pdf Hersteller: Vishay General Semiconductor
Schottky Diodes & Rectifiers If 8A Vrrm 100V Ifsm 100A
auf Bestellung 14281 Stücke:
Lieferzeit 10-14 Tag (e)
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4+0.87 EUR
10+ 0.74 EUR
100+ 0.52 EUR
500+ 0.4 EUR
1000+ 0.29 EUR
2500+ 0.28 EUR
Mindestbestellmenge: 4
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Technische Details V8PAM10-M3/I Vishay General Semiconductor

Description: DIODE SCHOTTKY 100V 8A DO221BC, Packaging: Tape & Reel (TR), Package / Case: DO-221BC, SMA Flat Leads Exposed Pad, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 810pF @ 4V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: DO-221BC (SMPA), Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 780 mV @ 8 A, Current - Reverse Leakage @ Vr: 200 µA @ 100 V.

Weitere Produktangebote V8PAM10-M3/I nach Preis ab 0.28 EUR bis 0.86 EUR

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V8PAM10-M3/I Hersteller : Vishay General Semiconductor - Diodes Division v8pam10.pdf Description: DIODE SCHOTTKY 100V 8A DO221BC
Packaging: Cut Tape (CT)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 810pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
auf Bestellung 13272 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.86 EUR
24+ 0.74 EUR
100+ 0.52 EUR
500+ 0.4 EUR
1000+ 0.33 EUR
2000+ 0.29 EUR
5000+ 0.28 EUR
Mindestbestellmenge: 21
V8PAM10-M3/I Hersteller : Vishay General Semiconductor - Diodes Division v8pam10.pdf Description: DIODE SCHOTTKY 100V 8A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 810pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
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