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V8PAM10-M3/I Vishay General Semiconductor
auf Bestellung 14281 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.87 EUR |
10+ | 0.74 EUR |
100+ | 0.52 EUR |
500+ | 0.4 EUR |
1000+ | 0.29 EUR |
2500+ | 0.28 EUR |
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Technische Details V8PAM10-M3/I Vishay General Semiconductor
Description: DIODE SCHOTTKY 100V 8A DO221BC, Packaging: Tape & Reel (TR), Package / Case: DO-221BC, SMA Flat Leads Exposed Pad, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 810pF @ 4V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: DO-221BC (SMPA), Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 780 mV @ 8 A, Current - Reverse Leakage @ Vr: 200 µA @ 100 V.
Weitere Produktangebote V8PAM10-M3/I nach Preis ab 0.28 EUR bis 0.86 EUR
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V8PAM10-M3/I | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-221BC, SMA Flat Leads Exposed Pad Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 810pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: DO-221BC (SMPA) Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 8 A Current - Reverse Leakage @ Vr: 200 µA @ 100 V |
auf Bestellung 13272 Stücke: Lieferzeit 10-14 Tag (e) |
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V8PAM10-M3/I | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-221BC, SMA Flat Leads Exposed Pad Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 810pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: DO-221BC (SMPA) Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 8 A Current - Reverse Leakage @ Vr: 200 µA @ 100 V |
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