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V2PM10LHM3/I Vishay General Semiconductor
auf Bestellung 9975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.74 EUR |
10+ | 0.52 EUR |
100+ | 0.26 EUR |
1000+ | 0.18 EUR |
2500+ | 0.16 EUR |
10000+ | 0.14 EUR |
20000+ | 0.13 EUR |
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Technische Details V2PM10LHM3/I Vishay General Semiconductor
Description: DIODE SCHOTTKY 100V 1.9A DO220AA, Packaging: Tape & Reel (TR), Package / Case: DO-220AA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 195pF @ 4V, 1MHz, Current - Average Rectified (Io): 1.9A, Supplier Device Package: DO-220AA (SMP), Operating Temperature - Junction: -40°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A, Current - Reverse Leakage @ Vr: 100 µA @ 5 V, Qualification: AEC-Q101.
Weitere Produktangebote V2PM10LHM3/I
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V2PM10LHM3/I | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-220AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 195pF @ 4V, 1MHz Current - Average Rectified (Io): 1.9A Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 5 V Qualification: AEC-Q101 |
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V2PM10LHM3/I | Hersteller : Vishay Semiconductors |
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Produkt ist nicht verfügbar |