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V20D60C-M3/I Vishay General Semiconductor
auf Bestellung 3731 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 2.06 EUR |
10+ | 1.67 EUR |
100+ | 1.31 EUR |
500+ | 1.11 EUR |
1000+ | 0.9 EUR |
2000+ | 0.85 EUR |
4000+ | 0.84 EUR |
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Technische Details V20D60C-M3/I Vishay General Semiconductor
Description: DIODE ARR SCHOTT 60V 10A TO263AC, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A, Supplier Device Package: TO-263AC (SMPD), Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A, Current - Reverse Leakage @ Vr: 600 µA @ 60 V.
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V20D60C-M3/I | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A Current - Reverse Leakage @ Vr: 600 µA @ 60 V |
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