V15P22-M3/H Vishay General Semiconductor
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.1 EUR |
10+ | 2.43 EUR |
100+ | 1.9 EUR |
1500+ | 1.09 EUR |
3000+ | 1.07 EUR |
9000+ | 1.05 EUR |
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Technische Details V15P22-M3/H Vishay General Semiconductor
Description: DIODE SCHOTTKY 200V 3.3A TO277A, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 835pF @ 4V, 1MHz, Current - Average Rectified (Io): 3.3A, Supplier Device Package: TO-277A (SMPC), Operating Temperature - Junction: -40°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 910 mV @ 15 A, Current - Reverse Leakage @ Vr: 350 µA @ 200 V, Qualification: AEC-Q101.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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V15P22-M3/H | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 835pF @ 4V, 1MHz Current - Average Rectified (Io): 3.3A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 910 mV @ 15 A Current - Reverse Leakage @ Vr: 350 µA @ 200 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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V15P22-M3/H | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 835pF @ 4V, 1MHz Current - Average Rectified (Io): 3.3A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 910 mV @ 15 A Current - Reverse Leakage @ Vr: 350 µA @ 200 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |