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V10PM12HM3_A/I Vishay General Semiconductor - Diodes Division
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Description: DIODE SCHOTTKY 120V 3.9A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3.9A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 10 A
Current - Reverse Leakage @ Vr: 400 µA @ 120 V
Qualification: AEC-Q101
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Technische Details V10PM12HM3_A/I Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 3.9A TO277A, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 3.9A, Supplier Device Package: TO-277A (SMPC), Operating Temperature - Junction: -40°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 120 V, Voltage - Forward (Vf) (Max) @ If: 830 mV @ 10 A, Current - Reverse Leakage @ Vr: 400 µA @ 120 V, Qualification: AEC-Q101.
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V10PM12HM3_A/I | Hersteller : Vishay General Semiconductor |
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