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V10P6-M3/86A Vishay General Semiconductor - Diodes Division
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Description: DIODE SCHOTTKY 60V 4.3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4.3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Current - Reverse Leakage @ Vr: 1.9 mA @ 60 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1500+ | 0.4 EUR |
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Technische Details V10P6-M3/86A Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 4.3A TO277A, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 4.3A, Supplier Device Package: TO-277A (SMPC), Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A, Current - Reverse Leakage @ Vr: 1.9 mA @ 60 V.
Weitere Produktangebote V10P6-M3/86A nach Preis ab 0.42 EUR bis 1.21 EUR
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V10P6-M3/86A | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 4.3A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A Current - Reverse Leakage @ Vr: 1.9 mA @ 60 V |
auf Bestellung 13188 Stücke: Lieferzeit 10-14 Tag (e) |
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V10P6-M3/86A | Hersteller : Vishay General Semiconductor |
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auf Bestellung 6346 Stücke: Lieferzeit 10-14 Tag (e) |
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V10P6-M3/86A | Hersteller : Vishay |
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Produkt ist nicht verfügbar |