US6K1TR Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 1.5A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT6
Description: MOSFET 2N-CH 30V 1.5A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT6
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.36 EUR |
6000+ | 0.34 EUR |
9000+ | 0.31 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details US6K1TR Rohm Semiconductor
Description: ROHM - US6K1TR - Dual-MOSFET, n-Kanal, 30 V, 1.5 A, 0.34 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: -, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: -, MSL: -, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 1.5A, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: -, Drain-Source-Spannung Vds, n-Kanal: 30V, euEccn: NLR, Bauform - Transistor: TUMT, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.34ohm, productTraceability: No, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 1W, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote US6K1TR nach Preis ab 0.18 EUR bis 0.95 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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US6K1TR | Hersteller : Rohm Semiconductor | Trans MOSFET N-CH Si 30V 1.5A 6-Pin TUMT T/R |
auf Bestellung 712 Stücke: Lieferzeit 14-21 Tag (e) |
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US6K1TR | Hersteller : Rohm Semiconductor | Trans MOSFET N-CH Si 30V 1.5A 6-Pin TUMT T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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US6K1TR | Hersteller : Rohm Semiconductor | Trans MOSFET N-CH Si 30V 1.5A 6-Pin TUMT T/R |
auf Bestellung 55295 Stücke: Lieferzeit 14-21 Tag (e) |
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US6K1TR | Hersteller : ROHM Semiconductor | MOSFET 2N-CH 30V 1.5A |
auf Bestellung 20551 Stücke: Lieferzeit 10-14 Tag (e) |
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US6K1TR | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 1.5A TUMT6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TUMT6 |
auf Bestellung 24843 Stücke: Lieferzeit 10-14 Tag (e) |
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US6K1TR | Hersteller : ROHM |
Description: ROHM - US6K1TR - Dual-MOSFET, n-Kanal, 30 V, 1.5 A, 0.34 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: - MSL: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 1.5A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: TUMT Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.34ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1W Betriebstemperatur, max.: 150°C |
auf Bestellung 3771 Stücke: Lieferzeit 14-21 Tag (e) |
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US6K1TR |
auf Bestellung 105 Stücke: Lieferzeit 21-28 Tag (e) |
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US6K1TR | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 1.5A; Idm: 6A; 1W; TUMT6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.5A Pulsed drain current: 6A Power dissipation: 1W Case: TUMT6 Gate-source voltage: ±12V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 1.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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US6K1TR | Hersteller : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 1.5A; Idm: 6A; 1W; TUMT6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.5A Pulsed drain current: 6A Power dissipation: 1W Case: TUMT6 Gate-source voltage: ±12V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 1.6nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |