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UPA2815T1S-E2-AT

UPA2815T1S-E2-AT Renesas Electronics Corporation

upa2815t1s-datasheet?language=en Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 30V 21A 8HWSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 21A, 10V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-HWSON (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.77 EUR
10000+ 0.75 EUR
Mindestbestellmenge: 5000
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Technische Details UPA2815T1S-E2-AT Renesas Electronics Corporation

Description: MOSFET P-CH 30V 21A 8HWSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 21A, 10V, Power Dissipation (Max): 1.5W (Ta), Supplier Device Package: 8-HWSON (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 10 V.

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UPA2815T1S-E2-AT UPA2815T1S-E2-AT Hersteller : Renesas Electronics Corporation upa2815t1s-datasheet?language=en Description: MOSFET P-CH 30V 21A 8HWSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 21A, 10V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-HWSON (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+2.97 EUR
10+ 1.89 EUR
100+ 1.27 EUR
500+ 1.01 EUR
1000+ 0.92 EUR
2000+ 0.85 EUR
Mindestbestellmenge: 6
UPA2815T1S-E2-AT UPA2815T1S-E2-AT Hersteller : Renesas Electronics r07ds0777ej0101_pomosfet-1093114.pdf MOSFET MOSFET
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