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UJ4SC075011B7S

UJ4SC075011B7S UnitedSiC

DS_UJ4SC075011B7S.pdf Hersteller: UnitedSiC
Description: 750V/11MOHM, N-OFF SIC STACK CAS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
auf Bestellung 43 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+50.44 EUR
10+46.53 EUR
Produktrezensionen
Produktbewertung abgeben

Technische Details UJ4SC075011B7S UnitedSiC

Description: 750V/11MOHM, N-OFF SIC STACK CAS, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Cascode SiCJFET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 104A (Tc), Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V, Power Dissipation (Max): 357W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 10mA, Supplier Device Package: D2PAK-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V.

Weitere Produktangebote UJ4SC075011B7S nach Preis ab 28.30 EUR bis 59.65 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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UJ4SC075011B7S UJ4SC075011B7S Hersteller : Qorvo / UnitedSiC UJ4SC075011B7S_Data_Sheet-3177205.pdf JFET
auf Bestellung 433 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+56.99 EUR
25+52.55 EUR
250+44.88 EUR
800+44.86 EUR
UJ4SC075011B7S UJ4SC075011B7S Hersteller : Qorvo UJ4SC075011B7S_Data_Sheet-3177205.pdf SiC MOSFETs 750V/11mO,SICFET,G4,TO263-7
auf Bestellung 690 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+59.65 EUR
25+52.64 EUR
100+45.62 EUR
250+38.60 EUR
500+35.11 EUR
800+29.85 EUR
2400+28.30 EUR
UJ4SC075011B7S UJ4SC075011B7S Hersteller : QORVO 3971385.pdf Description: QORVO - UJ4SC075011B7S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 104 A, 750 V, 11 mohm, D2PAK
tariffCode: 85412900
Drain-Source-Spannung Vds: 750V
rohsCompliant: YES
Dauer-Drainstrom Id: 104A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5.5V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 357W
Bauform - Transistor: D2PAK
Anzahl der Pins: 7Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 12V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 11mohm
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 489 Stücke:
Lieferzeit 14-21 Tag (e)
UJ4SC075011B7S UJ4SC075011B7S Hersteller : UnitedSiC DS_UJ4SC075011B7S.pdf Description: 750V/11MOHM, N-OFF SIC STACK CAS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
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