auf Bestellung 1698 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 13.06 EUR |
| 25+ | 11.35 EUR |
| 100+ | 9.79 EUR |
| 250+ | 9.01 EUR |
| 500+ | 8.40 EUR |
| 1000+ | 8.11 EUR |
| 6000+ | 8.10 EUR |
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Technische Details UJ4C075060L8S Qorvo
Description: 750V/60MO,SICFET,G4,TOLL, Packaging: Bulk, Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 27.8A (Tc), Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V, Power Dissipation (Max): 155W (Tc), Vgs(th) (Max) @ Id: 6V @ 10mA, Supplier Device Package: TOLL, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V.
Weitere Produktangebote UJ4C075060L8S
| Foto | Bezeichnung | Hersteller | Beschreibung |
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UJ4C075060L8S | Hersteller : Qorvo |
 Description: 750V/60MO,SICFET,G4,TOLLPackaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 27.8A (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V Power Dissipation (Max): 155W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V |
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