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UGB8DT DIOTEC SEMICONDUCTOR
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Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8A; 35ns; D2PAK; Ufmax: 1V; Ifsm: 112A
Kind of package: tube
Max. off-state voltage: 200V
Max. load current: 22A
Max. forward voltage: 1V
Load current: 8A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 112A
Leakage current: 5µA
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Mounting: SMD
Case: D2PAK
auf Bestellung 811 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
76+ | 0.94 EUR |
139+ | 0.51 EUR |
160+ | 0.45 EUR |
182+ | 0.39 EUR |
192+ | 0.37 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details UGB8DT DIOTEC SEMICONDUCTOR
Description: DIODE GEN PURP 200V 8A TO263AB, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -50°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.
Weitere Produktangebote UGB8DT nach Preis ab 0.37 EUR bis 0.94 EUR
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UGB8DT | Hersteller : DIOTEC SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 200V; 8A; 35ns; D2PAK; Ufmax: 1V; Ifsm: 112A Kind of package: tube Max. off-state voltage: 200V Max. load current: 22A Max. forward voltage: 1V Load current: 8A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 112A Leakage current: 5µA Type of diode: rectifying Features of semiconductor devices: superfast switching Mounting: SMD Case: D2PAK Anzahl je Verpackung: 1 Stücke |
auf Bestellung 811 Stücke: Lieferzeit 7-14 Tag (e) |
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UGB8DT Produktcode: 92900 |
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UGB8DT | Hersteller : Diotec Semiconductor |
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Produkt ist nicht verfügbar |
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UGB8DT | Hersteller : Diotec Semiconductor |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
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UGB8DT | Hersteller : Diotec Semiconductor AG |
![]() Packaging: Tube Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
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UGB8DT | Hersteller : Diotec Semiconductor |
![]() Packaging: Tube Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
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UGB8DT | Hersteller : Diotec Semiconductor |
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Produkt ist nicht verfügbar |
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UGB8DT | Hersteller : Vishay Semiconductors |
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Produkt ist nicht verfügbar |