UCC27712QDQ1 Texas Instruments
Hersteller: Texas InstrumentsDriver 2.8A 2-OUT High and Low Side Half Brdg Non-Inv Automotive AEC-Q100 8-Pin SOIC Tube
auf Bestellung 525 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 82+ | 1.88 EUR |
| 150+ | 1.8 EUR |
| 300+ | 1.66 EUR |
| 525+ | 1.45 EUR |
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Technische Details UCC27712QDQ1 Texas Instruments
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 10V ~ 20V, High Side Voltage - Max (Bootstrap): 600 V, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 16ns, 10ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: IGBT, N-Channel, P-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 2.4V, Current - Peak Output (Source, Sink): 1.8A, 2.8A, Part Status: Active, DigiKey Programmable: Not Verified, Grade: Automotive, Qualification: AEC-Q100.
Weitere Produktangebote UCC27712QDQ1 nach Preis ab 1.45 EUR bis 3.77 EUR
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UCC27712QDQ1 | Hersteller : Texas Instruments |
Driver 2.8A 2-OUT High and Low Side Half Brdg Non-Inv Automotive AEC-Q100 8-Pin SOIC Tube |
auf Bestellung 525 Stücke: Lieferzeit 14-21 Tag (e) |
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UCC27712QDQ1 | Hersteller : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; H-bridge,MOSFET half-bridge; SO8; -1.8÷2.8A; Ch: 2 Type of integrated circuit: driver Topology: H-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -1.8...2.8A Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 50ns Pulse fall time: 30ns Application: automotive industry Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 198 Stücke: Lieferzeit 7-14 Tag (e) |
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UCC27712QDQ1 | Hersteller : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; H-bridge,MOSFET half-bridge; SO8; -1.8÷2.8A; Ch: 2 Type of integrated circuit: driver Topology: H-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -1.8...2.8A Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 50ns Pulse fall time: 30ns Application: automotive industry Kind of package: tube |
auf Bestellung 198 Stücke: Lieferzeit 14-21 Tag (e) |
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UCC27712QDQ1 | Hersteller : Texas Instruments |
Gate Drivers Autom620-V,1.8A,2.8A HighSiLowSiGateDriv |
auf Bestellung 344 Stücke: Lieferzeit 10-14 Tag (e) |
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UCC27712QDQ1 | Hersteller : Texas Instruments |
Driver 2.8A 2-OUT High and Low Side Half Brdg Non-Inv Automotive AEC-Q100 8-Pin SOIC Tube |
Produkt ist nicht verfügbar |
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UCC27712QDQ1 | Hersteller : Texas Instruments |
Driver 2.8A 2-OUT High and Low Side Half Brdg Non-Inv Automotive 8-Pin SOIC Tube |
Produkt ist nicht verfügbar |
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UCC27712QDQ1 | Hersteller : Texas Instruments |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 16ns, 10ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 1.8A, 2.8A Part Status: Active DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |