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TZX9V1D-TAP Vishay General Semiconductor - Diodes Division
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Description: DIODE ZENER 9.1V 500MW DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.8 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.047 EUR |
30000+ | 0.046 EUR |
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Technische Details TZX9V1D-TAP Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 500MW DO35, Packaging: Tape & Box (TB), Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Operating Temperature: -65°C ~ 175°C, Voltage - Zener (Nom) (Vz): 9.1 V, Impedance (Max) (Zzt): 20 Ohms, Supplier Device Package: DO-204AH (DO-35), Power - Max: 500 mW, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA, Current - Reverse Leakage @ Vr: 1 µA @ 6.8 V, Grade: Automotive, Qualification: AEC-Q101.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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TZX9V1D-TAP | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-204AH (DO-35) Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 6.8 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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TZX9V1D-TAP | Hersteller : Vishay Semiconductors |
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Produkt ist nicht verfügbar |