auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 14.71 EUR |
10+ | 11.49 EUR |
30+ | 11.07 EUR |
60+ | 9.4 EUR |
120+ | 8.78 EUR |
270+ | 8.62 EUR |
510+ | 8.45 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TW107N65C,S1F Toshiba
Description: G3 650V SIC-MOSFET TO-247 107MO, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 145mOhm @ 10A, 18V, Power Dissipation (Max): 76W (Tc), Vgs(th) (Max) @ Id: 5V @ 1.2mA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V.
Weitere Produktangebote TW107N65C,S1F nach Preis ab 11.02 EUR bis 15.96 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||
---|---|---|---|---|---|---|---|---|---|---|---|
TW107N65C,S1F | Hersteller : Toshiba Semiconductor and Storage |
Description: G3 650V SIC-MOSFET TO-247 107MO Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 10A, 18V Power Dissipation (Max): 76W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.2mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V |
auf Bestellung 68 Stücke: Lieferzeit 10-14 Tag (e) |
|