![TW060N120C,S1F TW060N120C,S1F](https://www.mouser.com/images/toshibaamericaelectroniccomponentsinc/lrg/TO-247_3_SPL.jpg)
auf Bestellung 270 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 30.31 EUR |
10+ | 28.78 EUR |
30+ | 24.55 EUR |
60+ | 24.31 EUR |
120+ | 23.57 EUR |
510+ | 20.93 EUR |
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Technische Details TW060N120C,S1F Toshiba
Description: G3 1200V SIC-MOSFET TO-247 60MO, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 18A, 18V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 5V @ 4.2mA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 800 V.
Weitere Produktangebote TW060N120C,S1F nach Preis ab 24.61 EUR bis 30.4 EUR
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TW060N120C,S1F | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 18A, 18V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 5V @ 4.2mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 800 V |
auf Bestellung 45 Stücke: Lieferzeit 10-14 Tag (e) |
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