auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 34.3 EUR |
10+ | 30.48 EUR |
30+ | 28.42 EUR |
60+ | 27.53 EUR |
120+ | 26.65 EUR |
270+ | 24.87 EUR |
510+ | 22.88 EUR |
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Technische Details TW045Z120C,S1F Toshiba
Description: G3 1200V SIC-MOSFET TO-247-4L 4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Power Dissipation (Max): 182W (Tc), Vgs(th) (Max) @ Id: 5V @ 6.7mA, Supplier Device Package: TO-247-4L(X), Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V, Rds On (Max) @ Id, Vgs: 62mOhm @ 20A, 18V.
Weitere Produktangebote TW045Z120C,S1F
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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TW045Z120C,S1F | Hersteller : Toshiba Semiconductor and Storage |
Description: G3 1200V SIC-MOSFET TO-247-4L 4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Power Dissipation (Max): 182W (Tc) Vgs(th) (Max) @ Id: 5V @ 6.7mA Supplier Device Package: TO-247-4L(X) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V Rds On (Max) @ Id, Vgs: 62mOhm @ 20A, 18V |
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