![TW027N65C,S1F TW027N65C,S1F](https://www.mouser.com/images/toshibaamericaelectroniccomponentsinc/lrg/TO-247_3_SPL.jpg)
auf Bestellung 146 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 35.62 EUR |
10+ | 27.37 EUR |
60+ | 27.35 EUR |
120+ | 27.07 EUR |
270+ | 23.85 EUR |
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Technische Details TW027N65C,S1F Toshiba
Description: G3 650V SIC-MOSFET TO-247 27MOH, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), Rds On (Max) @ Id, Vgs: 37mOhm @ 29A, 18V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 5V @ 3mA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V.
Weitere Produktangebote TW027N65C,S1F nach Preis ab 27.06 EUR bis 37.42 EUR
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TW027N65C,S1F | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 29A, 18V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 5V @ 3mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V |
auf Bestellung 67 Stücke: Lieferzeit 10-14 Tag (e) |
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