TW015Z120C,S1F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: G3 1200V SIC-MOSFET TO-247-4L 1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 18V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 5V @ 11.7mA
Supplier Device Package: TO-247-4L(X)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 800 V
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 98.74 EUR |
| 10+ | 89.76 EUR |
| 100+ | 80.79 EUR |
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Technische Details TW015Z120C,S1F Toshiba Semiconductor and Storage
Description: G3 1200V SIC-MOSFET TO-247-4L 1, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 18V, Power Dissipation (Max): 431W (Tc), Vgs(th) (Max) @ Id: 5V @ 11.7mA, Supplier Device Package: TO-247-4L(X), Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 800 V.
Weitere Produktangebote TW015Z120C,S1F nach Preis ab 78.3 EUR bis 100.39 EUR
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TW015Z120C,S1F | Hersteller : Toshiba |
MOSFET G3 1200V SiC-MOSFET TO-247-4L 15mohm |
auf Bestellung 24 Stücke: Lieferzeit 10-14 Tag (e) |
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