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TSM6502CR RLG

TSM6502CR RLG Taiwan Semiconductor


TSM6502CR_A1701.pdf Hersteller: Taiwan Semiconductor
MOSFETs 60V, 24A, -60V, -18A, Complementary N & P-Channel Power MOSFET
auf Bestellung 548 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.64 EUR
10+ 1.34 EUR
100+ 1.04 EUR
500+ 0.89 EUR
1000+ 0.72 EUR
2500+ 0.68 EUR
5000+ 0.65 EUR
Mindestbestellmenge: 2
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Technische Details TSM6502CR RLG Taiwan Semiconductor

Description: MOSFET N/P-CH 60V 24A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 40W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V, Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (5x6).

Weitere Produktangebote TSM6502CR RLG nach Preis ab 0.7 EUR bis 2.01 EUR

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TSM6502CR RLG TSM6502CR RLG Hersteller : Taiwan Semiconductor Corporation TSM6502CR_A1701.pdf Description: MOSFET N/P-CH 60V 24A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
auf Bestellung 2373 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.01 EUR
14+ 1.35 EUR
100+ 0.94 EUR
500+ 0.76 EUR
1000+ 0.7 EUR
Mindestbestellmenge: 9
TSM6502CR RLG TSM6502CR RLG Hersteller : Taiwan Semiconductor 11173220635012840tsm6502cr_a1701.pdf Trans MOSFET N/P-CH 60V 5.4A/4A 8-Pin PDFN EP T/R
Produkt ist nicht verfügbar
TSM6502CR RLG TSM6502CR RLG Hersteller : Taiwan Semiconductor Corporation TSM6502CR_A1701.pdf Description: MOSFET N/P-CH 60V 24A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Produkt ist nicht verfügbar