TSM6502CR RLG Taiwan Semiconductor
Hersteller: Taiwan Semiconductor
MOSFETs 60V, 24A, -60V, -18A, Complementary N & P-Channel Power MOSFET
MOSFETs 60V, 24A, -60V, -18A, Complementary N & P-Channel Power MOSFET
auf Bestellung 548 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 1.64 EUR |
10+ | 1.34 EUR |
100+ | 1.04 EUR |
500+ | 0.89 EUR |
1000+ | 0.72 EUR |
2500+ | 0.68 EUR |
5000+ | 0.65 EUR |
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Technische Details TSM6502CR RLG Taiwan Semiconductor
Description: MOSFET N/P-CH 60V 24A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 40W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V, Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (5x6).
Weitere Produktangebote TSM6502CR RLG nach Preis ab 0.7 EUR bis 2.01 EUR
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TSM6502CR RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N/P-CH 60V 24A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 40W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) |
auf Bestellung 2373 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM6502CR RLG | Hersteller : Taiwan Semiconductor | Trans MOSFET N/P-CH 60V 5.4A/4A 8-Pin PDFN EP T/R |
Produkt ist nicht verfügbar |
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TSM6502CR RLG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N/P-CH 60V 24A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 40W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) |
Produkt ist nicht verfügbar |