TSM60N380CI C0G TAIWAN SEMICONDUCTOR
Hersteller: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 20.5nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 20.5nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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Technische Details TSM60N380CI C0G TAIWAN SEMICONDUCTOR
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 33W; TO220FP, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 11A, Power dissipation: 33W, Case: TO220FP, Gate-source voltage: ±30V, On-state resistance: 0.38Ω, Mounting: THT, Gate charge: 20.5nC, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
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TSM60N380CI C0G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 20.5nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |