TSM4800N15CX6 RFG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 150V 1.4A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1.1A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 10 V
Description: MOSFET N-CH 150V 1.4A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1.1A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 10 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.29 EUR |
6000+ | 0.27 EUR |
9000+ | 0.26 EUR |
15000+ | 0.25 EUR |
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Technische Details TSM4800N15CX6 RFG Taiwan Semiconductor Corporation
Description: MOSFET N-CH 150V 1.4A SOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc), Rds On (Max) @ Id, Vgs: 480mOhm @ 1.1A, 10V, Power Dissipation (Max): 2.1W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: SOT-26, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 10 V.
Weitere Produktangebote TSM4800N15CX6 RFG nach Preis ab 0.27 EUR bis 1 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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TSM4800N15CX6 RFG | Hersteller : Taiwan Semiconductor | MOSFETs 150V, 1.4A, Single N-Channel Power MOSFET |
auf Bestellung 13151 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM4800N15CX6 RFG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 150V 1.4A SOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Rds On (Max) @ Id, Vgs: 480mOhm @ 1.1A, 10V Power Dissipation (Max): 2.1W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 10 V |
auf Bestellung 16817 Stücke: Lieferzeit 10-14 Tag (e) |
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