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TSM320N03CX RFG Taiwan Semiconductor Corporation
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Description: MOSFET N-CHANNEL 30V 5.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.8W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 792 pF @ 15 V
auf Bestellung 81000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.22 EUR |
6000+ | 0.21 EUR |
9000+ | 0.19 EUR |
75000+ | 0.17 EUR |
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Technische Details TSM320N03CX RFG Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 30V 5.5A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V, Power Dissipation (Max): 1.8W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 792 pF @ 15 V.
Weitere Produktangebote TSM320N03CX RFG nach Preis ab 0.19 EUR bis 2.65 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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TSM320N03CX RFG | Hersteller : Taiwan Semiconductor Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V Power Dissipation (Max): 1.8W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 792 pF @ 15 V |
auf Bestellung 83947 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM320N03CX RFG | Hersteller : Taiwan Semiconductor |
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auf Bestellung 19215 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM320N03CX RFG | Hersteller : TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 400mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Power dissipation: 0.4W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 32mΩ Mounting: SMD Gate charge: 8.9nC Kind of channel: enhanced |
auf Bestellung 136 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM320N03CX RFG | Hersteller : TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.3A Case: SOT23 Gate-source voltage: ±12V On-state resistance: 32mΩ Mounting: SMD Gate charge: 8.4nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 27 Stücke: Lieferzeit 7-14 Tag (e) |
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TSM320N03CX RFG | Hersteller : TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.3A Case: SOT23 Gate-source voltage: ±12V On-state resistance: 32mΩ Mounting: SMD Gate charge: 8.4nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 27 Stücke: Lieferzeit 7-14 Tag (e) |
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![]() |
TSM320N03CX RFG | Hersteller : TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5.3A; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.3A Case: SOT23 Gate-source voltage: ±12V On-state resistance: 32mΩ Mounting: SMD Gate charge: 8.4nC Kind of channel: enhanced |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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TSM320N03CX RFG | Hersteller : Taiwan Semiconductor |
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TSM320N03CX RFG | Hersteller : Taiwan Semiconductor |
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Produkt ist nicht verfügbar |
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TSM320N03CX RFG | Hersteller : Taiwan Semiconductor |
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Produkt ist nicht verfügbar |
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TSM320N03CX RFG | Hersteller : Taiwan Semiconductor |
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Produkt ist nicht verfügbar |