TSM250N02DCQ RFG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor CorporationDescription: MOSFET 2N-CH 20V 5.8A 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 620mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-TDFN (2x2)
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.29 EUR |
| 6000+ | 0.28 EUR |
| 9000+ | 0.26 EUR |
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Technische Details TSM250N02DCQ RFG Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 20V 5.8A 6TDFN, Packaging: Tape & Reel (TR), Package / Case: 6-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 620mW (Tc), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 10V, Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: 6-TDFN (2x2), Part Status: Active.
Weitere Produktangebote TSM250N02DCQ RFG nach Preis ab 0.28 EUR bis 0.9 EUR
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TSM250N02DCQ RFG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 20V 5.8A 6TDFN Packaging: Cut Tape (CT) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 620mW (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: 6-TDFN (2x2) Part Status: Active |
auf Bestellung 17146 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM250N02DCQ RFG | Hersteller : Taiwan Semiconductor |
MOSFETs 20V, 5.8A, Dual N-Channel Power MOSFET |
auf Bestellung 14751 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM250N02DCQ RFG | Hersteller : Taiwan Semiconductor |
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TSM250N02DCQ RFG | Hersteller : Taiwan Semiconductor |
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TSM250N02DCQ RFG | Hersteller : Taiwan Semiconductor |
Trans MOSFET N-CH 20V 5.8A 6-Pin TDFN EP T/R |
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