TSM200N03DPQ33 RGG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 30V 20A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3x3)
Part Status: Active
Description: MOSFET 2N-CH 30V 20A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3x3)
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.28 EUR |
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Technische Details TSM200N03DPQ33 RGG Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 30V 20A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 20W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V, Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (3x3), Part Status: Active.
Weitere Produktangebote TSM200N03DPQ33 RGG nach Preis ab 0.31 EUR bis 1.03 EUR
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TSM200N03DPQ33 RGG | Hersteller : Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 30V 20A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 20W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (3x3) Part Status: Active |
auf Bestellung 12932 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM200N03DPQ33 RGG | Hersteller : Taiwan Semiconductor | MOSFETs 30V, 20A, Dual N-Channel Power MOSFET |
auf Bestellung 9464 Stücke: Lieferzeit 10-14 Tag (e) |
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TSM200N03DPQ33 RGG | Hersteller : Taiwan Semiconductor | Trans MOSFET N-CH 30V 20A 8-Pin P-DFN EP T/R |
Produkt ist nicht verfügbar |
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TSM200N03DPQ33 RGG | Hersteller : Taiwan Semiconductor | Trans MOSFET N-CH 30V 20A 8-Pin PDFN EP T/R |
Produkt ist nicht verfügbar |
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TSM200N03DPQ33 RGG | Hersteller : Taiwan Semiconductor | Trans MOSFET N-CH 30V 20A 8-Pin PDFN EP T/R |
Produkt ist nicht verfügbar |