TSM040N03CP Taiwan Semiconductor Corporation


Hersteller: Taiwan Semiconductor Corporation
Description: 30V, 90A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details TSM040N03CP Taiwan Semiconductor Corporation

Description: 30V, 90A, SINGLE N-CHANNEL POWER, Packaging: Tape & Reel (TR), Part Status: Active, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 10V, Power Dissipation (Max): 88W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V.

Weitere Produktangebote TSM040N03CP

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TSM040N03CP TSM040N03CP Hersteller : Taiwan Semiconductor TSM040N03CP_B1807-1918764.pdf MOSFET 30V, 90A, Single N-Channel Power MOSFET
Produkt ist nicht verfügbar