TSG65N195CE RVG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: 650V, 11A, PDFN88, E-MODE GAN TR
Packaging: Tape & Reel (TR)
Description: 650V, 11A, PDFN88, E-MODE GAN TR
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 7.52 EUR |
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Technische Details TSG65N195CE RVG Taiwan Semiconductor Corporation
Category: SMD N channel transistors, Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88, Type of transistor: N-JFET, Technology: GaN, Polarisation: unipolar, Kind of transistor: HEMT, Drain-source voltage: 650V, Drain current: 11A, Pulsed drain current: 19A, Case: PDFN88, Gate-source voltage: -10...7V, On-state resistance: 0.195Ω, Mounting: SMD, Gate charge: 2.2nC, Kind of package: tape, Kind of channel: enhanced, Features of semiconductor devices: Kelvin terminal, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote TSG65N195CE RVG nach Preis ab 7.52 EUR bis 14.71 EUR
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TSG65N195CE RVG | Hersteller : Taiwan Semiconductor Corporation |
Description: 650V, 11A, PDFN88, E-MODE GAN TR Packaging: Cut Tape (CT) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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TSG65N195CE RVG | Hersteller : Taiwan Semiconductor | GaN FETs 650V, 11A, PDFN88, E-mode GaN Transistor |
auf Bestellung 2980 Stücke: Lieferzeit 10-14 Tag (e) |
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TSG65N195CE RVG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88 Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 11A Pulsed drain current: 19A Case: PDFN88 Gate-source voltage: -10...7V On-state resistance: 0.195Ω Mounting: SMD Gate charge: 2.2nC Kind of package: tape Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TSG65N195CE RVG | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88 Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 11A Pulsed drain current: 19A Case: PDFN88 Gate-source voltage: -10...7V On-state resistance: 0.195Ω Mounting: SMD Gate charge: 2.2nC Kind of package: tape Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |