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TRS8E65F,S1Q Toshiba Semiconductor and Storage
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Description: DIODE SIL CARB 650V 8A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 28pF @ 650V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.86 EUR |
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Technische Details TRS8E65F,S1Q Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 650V 8A TO220-2L, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 28pF @ 650V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-220-2L, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
Weitere Produktangebote TRS8E65F,S1Q nach Preis ab 2.87 EUR bis 5.97 EUR
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TRS8E65F,S1Q | Hersteller : Toshiba |
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auf Bestellung 62 Stücke: Lieferzeit 10-14 Tag (e) |
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TRS8E65F,S1Q | Hersteller : Toshiba |
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