auf Bestellung 540 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 11.04 EUR |
| 10+ | 8.32 EUR |
| 30+ | 8.04 EUR |
| 60+ | 6.04 EUR |
| 120+ | 5.81 EUR |
| 270+ | 5.54 EUR |
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Technische Details TRS20N65FB,S1Q Toshiba
Description: DIODE ARR SIC SCHOT 650V TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A (DC), Supplier Device Package: TO-247, Operating Temperature - Junction: 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.
Weitere Produktangebote TRS20N65FB,S1Q nach Preis ab 8.05 EUR bis 11.86 EUR
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TRS20N65FB,S1Q | Hersteller : Toshiba Semiconductor and Storage |
 Description: DIODE ARR SIC SCHOT 650V TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A (DC) Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
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