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TPW1500CNH,L1Q

TPW1500CNH,L1Q Toshiba Semiconductor and Storage

TPW1500CNH_datasheet_en_20191030.pdf?did=30112&prodName=TPW1500CNH Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 19A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.79 EUR
Mindestbestellmenge: 5000
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Technische Details TPW1500CNH,L1Q Toshiba Semiconductor and Storage

Description: PB-F POWER MOSFET TRANSISTOR DSO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 15.4mOhm @ 19A, 10V, Power Dissipation (Max): 800mW (Ta), 142W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: 8-DSOP Advance, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V.

Weitere Produktangebote TPW1500CNH,L1Q nach Preis ab 1.81 EUR bis 4.12 EUR

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TPW1500CNH,L1Q TPW1500CNH,L1Q Hersteller : Toshiba TPW1500CNH_datasheet_en_20191030-1568552.pdf MOSFET POWER MOSFET TRANSISTOR
auf Bestellung 18438 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.03 EUR
10+ 3.34 EUR
100+ 2.68 EUR
250+ 2.46 EUR
500+ 2.25 EUR
1000+ 1.81 EUR
TPW1500CNH,L1Q TPW1500CNH,L1Q Hersteller : Toshiba Semiconductor and Storage TPW1500CNH_datasheet_en_20191030.pdf?did=30112&prodName=TPW1500CNH Description: PB-F POWER MOSFET TRANSISTOR DSO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 15.4mOhm @ 19A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V
auf Bestellung 7771 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.12 EUR
10+ 3.42 EUR
100+ 2.72 EUR
500+ 2.3 EUR
1000+ 1.95 EUR
2000+ 1.86 EUR
Mindestbestellmenge: 5
TPW1500CNH,L1Q TPW1500CNH,L1Q Hersteller : Toshiba tpw1500cnh_datasheet_en_20191030.pdf Trans MOSFET N-CH Si 150V 50A 8-Pin DSOP EP Advance T/R
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