TPS28226DRBT Texas Instruments
Hersteller: Texas InstrumentsDescription: IC GATE DRVR HALF-BRIDGE 8SON
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 6.8V ~ 8.8V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 33 V
Supplier Device Package: 8-SON (3x3)
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 250+ | 2.17 EUR |
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Technische Details TPS28226DRBT Texas Instruments
Description: IC GATE DRVR HALF-BRIDGE 8SON, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 6.8V ~ 8.8V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 33 V, Supplier Device Package: 8-SON (3x3), Rise / Fall Time (Typ): 10ns, 10ns, Channel Type: Synchronous, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: N-Channel MOSFET, Part Status: Active, DigiKey Programmable: Not Verified.
Weitere Produktangebote TPS28226DRBT nach Preis ab 2.31 EUR bis 3.2 EUR
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TPS28226DRBT | Hersteller : Texas Instruments |
Description: IC GATE DRVR HALF-BRIDGE 8SON Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 6.8V ~ 8.8V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 33 V Supplier Device Package: 8-SON (3x3) Rise / Fall Time (Typ): 10ns, 10ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 475 Stücke: Lieferzeit 10-14 Tag (e) |
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TPS28226DRBT | Hersteller : Texas Instruments |
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| TPS28226DRBT | Hersteller : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 6A Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: VSON8-EP Output current: 6A Number of channels: 2 Supply voltage: 4.5...8V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 10ns Pulse fall time: 5ns Kind of package: reel; tape Kind of output: inverting; non-inverting |
Produkt ist nicht verfügbar |