TPS28226DR Texas Instruments
Hersteller: Texas InstrumentsDescription: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 6.8V ~ 8.8V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 33 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
DigiKey Programmable: Not Verified
auf Bestellung 4167 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 431+ | 1.15 EUR |
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Technische Details TPS28226DR Texas Instruments
Category: MOSFET/IGBT drivers, Description: IC: driver; MOSFET half-bridge; MOSFET gate driver; SO8; 2A, Mounting: SMD, Case: SO8, Kind of package: reel; tape, Operating temperature: -40...125°C, Integrated circuit features: dead time; integrated bootstrap functionality; UVLO (UnderVoltage LockOut), Pulse fall time: 10ns, Impulse rise time: 10ns, Type of integrated circuit: driver, Output current: 2A, Protection: undervoltage UVP, Kind of integrated circuit: MOSFET gate driver, Topology: MOSFET half-bridge, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote TPS28226DR nach Preis ab 1.06 EUR bis 2.64 EUR
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TPS28226DR | Hersteller : Texas Instruments |
Gate Drivers Hi Fre 4A Sink Synch MOSFET Driver |
auf Bestellung 2417 Stücke: Lieferzeit 10-14 Tag (e) |
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TPS28226DR | Hersteller : Texas Instruments |
Driver 6A 2-OUT High and Low Side Half Brdg Inv/Non-Inv 8-Pin SOIC T/R |
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| TPS28226DR | Hersteller : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; MOSFET gate driver; SO8; 2A Mounting: SMD Case: SO8 Kind of package: reel; tape Operating temperature: -40...125°C Integrated circuit features: dead time; integrated bootstrap functionality; UVLO (UnderVoltage LockOut) Pulse fall time: 10ns Impulse rise time: 10ns Type of integrated circuit: driver Output current: 2A Protection: undervoltage UVP Kind of integrated circuit: MOSFET gate driver Topology: MOSFET half-bridge Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TPS28226DR | Hersteller : Texas Instruments |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 6.8V ~ 8.8V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 33 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 10ns, 10ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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TPS28226DR | Hersteller : Texas Instruments |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 6.8V ~ 8.8V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 33 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 10ns, 10ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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| TPS28226DR | Hersteller : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; MOSFET gate driver; SO8; 2A Mounting: SMD Case: SO8 Kind of package: reel; tape Operating temperature: -40...125°C Integrated circuit features: dead time; integrated bootstrap functionality; UVLO (UnderVoltage LockOut) Pulse fall time: 10ns Impulse rise time: 10ns Type of integrated circuit: driver Output current: 2A Protection: undervoltage UVP Kind of integrated circuit: MOSFET gate driver Topology: MOSFET half-bridge |
Produkt ist nicht verfügbar |