TPS1120DR Texas Instruments
auf Bestellung 344 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
84+ | 1.83 EUR |
91+ | 1.56 EUR |
101+ | 1.35 EUR |
250+ | 1.15 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TPS1120DR Texas Instruments
Description: MOSFET 2P-CH 15V 1.17A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 840mW, Drain to Source Voltage (Vdss): 15V, Current - Continuous Drain (Id) @ 25°C: 1.17A, Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote TPS1120DR nach Preis ab 1.15 EUR bis 3.27 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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TPS1120DR | Hersteller : Texas Instruments | Trans MOSFET P-CH Si 15V 1.17A 8-Pin SOIC T/R |
auf Bestellung 344 Stücke: Lieferzeit 14-21 Tag (e) |
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TPS1120DR | Hersteller : Texas Instruments | MOSFETs Dual P-Ch Enh-Mode MOSFET |
auf Bestellung 2798 Stücke: Lieferzeit 10-14 Tag (e) |
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TPS1120DR | Hersteller : Texas Instruments |
Description: MOSFET 2P-CH 15V 1.17A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 840mW Drain to Source Voltage (Vdss): 15V Current - Continuous Drain (Id) @ 25°C: 1.17A Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 724 Stücke: Lieferzeit 10-14 Tag (e) |
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TPS1120DR | Hersteller : TI | 0601+ ORIGINAL |
auf Bestellung 400 Stücke: Lieferzeit 21-28 Tag (e) |
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TPS1120DR | Hersteller : Texas Instruments | Trans MOSFET P-CH Si 15V 1.17A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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TPS1120DR | Hersteller : Texas Instruments | Trans MOSFET P-CH Si 15V 1.17A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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TPS1120DR | Hersteller : Texas Instruments | Trans MOSFET P-CH Si 15V 1.17A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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TPS1120DR | Hersteller : Texas Instruments |
Description: MOSFET 2P-CH 15V 1.17A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 840mW Drain to Source Voltage (Vdss): 15V Current - Continuous Drain (Id) @ 25°C: 1.17A Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |