![TPN5900CNH,L1Q TPN5900CNH,L1Q](https://www.mouser.com/images/toshibaamericaelectroniccomponentsinc/lrg/TSON_8_Advance_SPL.jpg)
auf Bestellung 5271 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 2.11 EUR |
10+ | 1.74 EUR |
100+ | 1.34 EUR |
500+ | 1.14 EUR |
1000+ | 0.87 EUR |
5000+ | 0.83 EUR |
10000+ | 0.82 EUR |
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Technische Details TPN5900CNH,L1Q Toshiba
Description: MOSFET N-CH 150V 9A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V, Power Dissipation (Max): 700mW (Ta), 39W (Tc), Vgs(th) (Max) @ Id: 4V @ 200µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V.
Weitere Produktangebote TPN5900CNH,L1Q nach Preis ab 0.89 EUR bis 2.15 EUR
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TPN5900CNH,L1Q | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V Power Dissipation (Max): 700mW (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V |
auf Bestellung 4756 Stücke: Lieferzeit 10-14 Tag (e) |
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TPN5900CNH,L1Q | Hersteller : Toshiba |
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Produkt ist nicht verfügbar |
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TPN5900CNH,L1Q | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V Power Dissipation (Max): 700mW (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V |
Produkt ist nicht verfügbar |