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TPH4R003NL,L1Q

TPH4R003NL,L1Q Toshiba Semiconductor and Storage

TPH4R003NL_datasheet_en_20191030.pdf?did=14427&prodName=TPH4R003NL Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 40A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 1.6W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
auf Bestellung 4868 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.62 EUR
14+ 1.33 EUR
100+ 1.04 EUR
500+ 0.88 EUR
1000+ 0.72 EUR
2000+ 0.67 EUR
Mindestbestellmenge: 11
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Technische Details TPH4R003NL,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N-CH 30V 40A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V, Power Dissipation (Max): 1.6W (Ta), 36W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 200µA, Supplier Device Package: 8-SOP Advance (5x5), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V.

Weitere Produktangebote TPH4R003NL,L1Q nach Preis ab 0.66 EUR bis 1.64 EUR

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TPH4R003NL,L1Q TPH4R003NL,L1Q Hersteller : Toshiba TPH4R003NL_datasheet_en_20191030-1916224.pdf MOSFET U-MOSVIII-H 30V 68A 6.8nC MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.64 EUR
10+ 1.34 EUR
100+ 1.04 EUR
500+ 0.89 EUR
1000+ 0.68 EUR
5000+ 0.66 EUR
Mindestbestellmenge: 2
TPH4R003NL,L1Q TPH4R003NL,L1Q Hersteller : Toshiba Semiconductor and Storage TPH4R003NL_datasheet_en_20191030.pdf?did=14427&prodName=TPH4R003NL Description: MOSFET N-CH 30V 40A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 1.6W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
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