![TPH2R506PL,L1Q TPH2R506PL,L1Q](https://static6.arrow.com/aropdfconversion/arrowimages/4251f541ffeaa3b5f2b059a4ccbca96703dc7c8d/tphr6503pll1q.jpg)
auf Bestellung 25000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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5000+ | 0.94 EUR |
10000+ | 0.86 EUR |
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Technische Details TPH2R506PL,L1Q Toshiba
Description: MOSFET N-CH 60V 100A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 4.5V, Power Dissipation (Max): 132W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 500µA, Supplier Device Package: 8-SOP Advance (5x5), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5435 pF @ 30 V.
Weitere Produktangebote TPH2R506PL,L1Q nach Preis ab 0.86 EUR bis 2.48 EUR
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TPH2R506PL,L1Q | Hersteller : Toshiba |
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auf Bestellung 25000 Stücke: Lieferzeit 14-21 Tag (e) |
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TPH2R506PL,L1Q | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 4.5V Power Dissipation (Max): 132W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5435 pF @ 30 V |
auf Bestellung 6564 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH2R506PL,L1Q | Hersteller : Toshiba |
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auf Bestellung 24614 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH2R506PL,L1Q | Hersteller : Toshiba |
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Produkt ist nicht verfügbar |
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TPH2R506PL,L1Q | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 4.5V Power Dissipation (Max): 132W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 500µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5435 pF @ 30 V |
Produkt ist nicht verfügbar |