Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > TPH2R306NH1,LQ
TPH2R306NH1,LQ

TPH2R306NH1,LQ Toshiba Semiconductor and Storage

TPH2R306NH1_datasheet_en_20201109.pdf?did=69034&prodName=TPH2R306NH1 Hersteller: Toshiba Semiconductor and Storage
Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.03 EUR
Mindestbestellmenge: 5000
Produktrezensionen
Produktbewertung abgeben

Technische Details TPH2R306NH1,LQ Toshiba Semiconductor and Storage

Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 136A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V, Power Dissipation (Max): 800mW (Ta), 170W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5.75), Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V.

Weitere Produktangebote TPH2R306NH1,LQ nach Preis ab 1.07 EUR bis 2.39 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
TPH2R306NH1,LQ TPH2R306NH1,LQ Hersteller : Toshiba Semiconductor and Storage TPH2R306NH1_datasheet_en_20201109.pdf?did=69034&prodName=TPH2R306NH1 Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
auf Bestellung 12968 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.38 EUR
10+ 1.97 EUR
100+ 1.57 EUR
500+ 1.33 EUR
1000+ 1.13 EUR
2000+ 1.07 EUR
Mindestbestellmenge: 8
TPH2R306NH1,LQ TPH2R306NH1,LQ Hersteller : Toshiba TPH2R306NH1_datasheet_en_20201109-2449190.pdf MOSFET UMOS8 SOP-ADV(N) RDSon=2.3mohm(max)
auf Bestellung 41474 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.39 EUR
10+ 1.99 EUR
100+ 1.58 EUR
250+ 1.56 EUR
500+ 1.34 EUR
1000+ 1.08 EUR
Mindestbestellmenge: 2
TPH2R306NH1,LQ TPH2R306NH1,LQ Hersteller : Toshiba tph2r306nh1_datasheet_en_20201109.pdf Trans MOSFET N-CH Si 60V 190A 8-Pin SOP Advance(N) T/R
Produkt ist nicht verfügbar
TPH2R306NH1,LQ Hersteller : Toshiba tph2r306nh1_datasheet_en_20201109.pdf Trans MOSFET N-CH Si 60V 190A 8-Pin SOP Advance(N) T/R
Produkt ist nicht verfügbar