![TPH2R306NH,L1Q TPH2R306NH,L1Q](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/2450/8-PowerVDFN PKG.jpg)
TPH2R306NH,L1Q Toshiba Semiconductor and Storage
![TPH2R306NH_datasheet_en_20191024.pdf?did=13732&prodName=TPH2R306NH](/images/adobe-acrobat.png)
Description: MOSFET N-CH 60V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
auf Bestellung 1698 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.68 EUR |
10+ | 2.23 EUR |
100+ | 1.78 EUR |
500+ | 1.5 EUR |
1000+ | 1.28 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TPH2R306NH,L1Q Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 60A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V, Power Dissipation (Max): 1.6W (Ta), 78W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5), Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V.
Weitere Produktangebote TPH2R306NH,L1Q nach Preis ab 1.22 EUR bis 2.78 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
TPH2R306NH,L1Q | Hersteller : Toshiba |
![]() |
auf Bestellung 8791 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
TPH2R306NH,L1Q Produktcode: 149945 |
![]() |
Produkt ist nicht verfügbar
|
|||||||||||||||||
![]() |
TPH2R306NH,L1Q | Hersteller : Toshiba |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
TPH2R306NH,L1Q | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V Power Dissipation (Max): 1.6W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V |
Produkt ist nicht verfügbar |