auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.87 EUR |
| 10000+ | 0.79 EUR |
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Technische Details TPH1R712MD,L1Q Toshiba
Description: MOSFET P-CH 20V 60A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 4.5V, Power Dissipation (Max): 78W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 1mA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 10 V.
Weitere Produktangebote TPH1R712MD,L1Q nach Preis ab 0.79 EUR bis 2.34 EUR
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TPH1R712MD,L1Q | Hersteller : Toshiba |
 Trans MOSFET P-CH Si 20V 60A 8-Pin SOP Advance T/R |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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TPH1R712MD,L1Q | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 60A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 4.5V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 10 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH1R712MD,L1Q | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 60A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 4.5V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 10 V |
auf Bestellung 13058 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH1R712MD,L1Q | Hersteller : Toshiba |
MOSFET P-Channel Mosfet 20V UMOS-VI |
auf Bestellung 8923 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH1R712MD,L1Q | Hersteller : Toshiba |
Trans MOSFET P-CH Si 20V 60A 8-Pin SOP Advance T/R |
Produkt ist nicht verfügbar |
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TPH1R712MD,L1Q | Hersteller : Toshiba |
Trans MOSFET P-CH Si 20V 60A 8-Pin SOP Advance T/R |
Produkt ist nicht verfügbar |